Switching effect properties on Sn-doped Sb70Te30 thin films

dc.contributor.author	ROCCA, J. A.
dc.contributor.author	RODRÍGUEZ, O. C.
dc.contributor.author	UREÑA, M. A.
dc.contributor.author	BILOVOL, V.
dc.contributor.author	FONTANA, M.
dc.date.accessioned	2019-11-02T10:05:44Z
dc.date.available	2019-11-02T10:05:44Z
dc.date.issued	2019
dc.identifier.citation	ROCCA, J. A., RODRÍGUEZ, O. C., UREÑA, M. A. et al. Switching effect properties on Sn-doped Sb70Te30 thin films. In: Amorphous and Nanostructured Chalcogenides. Abstract Book: proc. of the 9th International Conference, 30 June – 4 July, 2019. Chişinău, 2019, pp. 24-25.	en_US
dc.identifier.uri	http://repository.utm.md/handle/5014/5885
dc.description	Abstract	en_US
dc.description.abstract	Ge-Sb-Te phase-change materials in compositions close to Ge2Sb2Te5 and doped with Sn have been proposed to improve performance of phase-change memories (PCM) [1]. In a previous work we found that Sb70Te30 thin films show a sharp fall in the electrical resistance in a narrow temperature range when heating [2]. Thus, in this work we studied the effect of the addition of tin to this composition.	en_US
dc.language.iso	en	en_US
dc.publisher	Tehnica UTM	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	Sb70Te30	en_US
dc.subject	electrical resistance	en_US
dc.subject	thin films	en_US
dc.title	Switching effect properties on Sn-doped Sb70Te30 thin films	en_US
dc.type	Article	en_US