Abstract:
We preset the results of the study on thermoelectric properties and oscillatory effects layers and foils) based on p-type Bi2Te3 topological insulators and n-type Bi0.84Sb0.16 foils (d=10-20 μ m). Analysis of the Shubnikov de Haas oscillations of p-type Bi2Te3 single-crystal layers has confirmed the presence of surface states in layers with a high quantum charge carrier mobility of up to 20 × 103 cm2/(V s) and a Fermi surface anisotropy of A = 4, which are characteristic of bulk topological insulator. It has been revealed that the thermal conductivity of the foils in a temperature range of 300 100 K remains constant. Based on a technology developed by the authors for forming unsupported p-type Bi2Te3 single-crystal micro-layers and an n-type Bi0.84Sb0.16 foils a device was constructed that provides a temperature gradient of ?T = 9 K over an area of 0.01 cm2. Structures based on Bi2Te3 can be used to design miniature sensors for thermoelectric devices, such as thermoelectric coolers, in particular, for cooling a computer processor.