Thermoelectric properties of Ag-doped SnSe microwires and layers

Abstract

The thermoelectric properties of single-crystal layers and polycrystalline glass-insulated microwires made of Ag-doped SnSe in a temperature range of 90-300 K are studied. SnSeAg0.01 single crystals are grown by the vertical Bridgman method from a stoichiometric melt. A 35-μm-thick single-crystal layer is formed by the exfoliation method at a low temperature; glass-insulated polycrystalline microwires with different diameters of 39-141 μm are prepared by the Ulitovsky technique. The power factor of all the samples at room temperature has a value of 15-18 μW cm-1 K-2, which monotonically decreases with decreasing temperature. According to the measured thermoelectric power, all the samples exhibit n-type conductivity.