Facultatea Electronică şi Telecomunicaţii: Recent submissions

  • Influence of soft and rigid low frequency vibrations of AsnSm chains and rings in g-As2S3 on the low temperature anomalies 
    MITSA, V.; FEHER, A.; TKÁČ, V.; HOLOMB, R.; VERES, M. (Tehnica UTM, 2019)
    The study of the g-As2S3 thermal conductivity k (T) revealed the temperature hysteresis at low temperature in the temperature range between 11 and 60 K with cooling and heating rates, v1 = 6.4 × 10-3K/s and v2 = 6.9 × 10-3 ...
  • Surface relief recording-erasing in amorphous chalcogenide layers and nanocomposites 
    KOKENYESI, S.; MOLNAR, S.; BURUNKOVA, J.; ALKHALIL, G.; CSARNOVICS, I.; KAGANOVSKII, YU. (Tehnica UTM, 2019)
    New materials and technologies are under intensive research and development last time for fabrication of separate or integrated photonic elements, matrices, photonic crystals, and metasurfaces in our laboratories and ...
  • The photoinduced displacement of amorphous chalcogenide and photochromic organic compounds 
    TETERIS, J. (Tehnica UTM, 2019)
    The direct surface patterning of chalcogenide and photochromic organic compound amorphous films via photoinduced displacement of matter was studied. The influence of the amorphous film thickness, grating period, intensity ...
  • Chalcogenide materials for emerging memories 
    VELEA, A. (Tehnica UTM, 2019)
    Emerging resistive switching (RS) non-volatile memory (NVM) technologies, such as resistive random access memory (RRAM) or phase change memory (PCM), are promising candidates for the next generation of advanced data storage ...
  • Micro and nanostructuring of chalcogenide glasses 
    VLCEK, M.; PALKA, K.; SLANG, S.; LOGHINA, L.; IAKOVLEVA, A. (Tehnica UTM, 2019)
    Chalcogenide glasses, non-oxide glasses based on one or more chalcogen element (S, Se, Te), usually alloyed with more electropositive network-forming elements such as As, Ge or others posses many unique properties which ...
  • Enhancing the stoichiometry of sequentially electrodeposited CZTS thin films 
    ZAKI, M. Ya.; NOUNEH, K.; TOUHAMI, M. Ebn; GALCA, A.-C.; MATEI, E.; PINTILIE, L. (Tehnica UTM, 2019)
    Copper zinc tin sulfide (CZTS) is a promising chalcogenide semiconductor which has received increasing interest in the last two decades for applications in solar cells. It offers favorable optical and electronic properties ...
  • Study of electrodeposited Cu2ZnSnS4 thin film properties by a modified sulfurization process 
    AZMI, S.; KHOUMRI, EL M.; NOHAIR, M.; GALCA, A.-C.; DABALA, M. (Tehnica UTM, 2019)
    Copper zinc tin sulfide (CZTS) is being related to the highly successful Cu(In,Ga)(S,Se)2, and CuInS2 materials, is fast becoming a key instrument for use in thin-film solar cells because of the low cost, environmentally ...
  • Characterization of CZTS thin films obtained by magnetron codeposition from binary sputtering targets 
    DIAGNE, O.; GALCA, A.-C.; SAVA, F.; SIMANDAN, I.-D.; VELEA, A. (Tehnica UTM, 2019)
    If photovoltaic energy is a so-called "clean" energy, the materials used, partly rare or nondurable ores, and the production processes are less so. To overcome the rare, toxic or expensive components of solar panels, ...
  • Comparative study between CZTS1-xSex and ABX3 based solar cells 
    DERBALI, S.; NOUNEH, K.; GALCA, A.-C.; FLOREA, M.; NEATU, F.; TOMULESCU, A. G.; LEONAT, L. N.; SECU, M.; STANCU, V.; PINTILIE, L. (Tehnica UTM, 2019)
    CZTS1-xSex and ABX3 (where A = CH3NH3 +, HC (NH2)2 +, CS+, Rb+; B = Pb2+, Sn2+, Sb2+; X = Cl, Br-, or I-), have received much attention from the scientific community as light absorbing semiconductor materials. Their ...
  • Chalcogenide materials screening for Ovonic Threshold Switching 
    MIHAI, C.; VELEA, A. (Tehnica UTM, 2019)
    The world need for data storage and processing is increasing at a rapid pace. A response to this societal demand could come from ovonic threshold switches based on chalcogenide materials, which are leading candidates for ...
  • Nonvolatile resistance switching in monolayer transition metal dichalcogenides: an explanation 
    SAVA, F.; VELEA, A.; MIHAI, C. O.; BURUIANA, A. T. (Tehnica UTM, 2019)
    Recently, Ge et. al. [1] showed that in atomic sheets of transition metal (from the group VI B) dichalcogenides (TMD) (Fig. 1) (MoS2, MoSe2, WS2 and WSe2) nonvolatile resistance switching occurs. In order to understand ...
  • Structure of nanosized Ge2Sb2Te5 films with silver impurity 
    TURMANOVA, K.; ZHAKYPOV, A.; PRIKHODKO, O.; TOLEPOV, Z.; KOZYUKHIN, S.; ISMAILOVA, G.; MAKSIMOVA, S. (Tehnica UTM, 2019)
    The paper presents the results of studying the structure of nanosized films Ge2Sb2Te5 with silver impurity (Ge2Sb2Te5<Ag>). The films were obtained by the method of ion-plasma highfrequency magnetron sputtering. Upon ...
  • Formation and properties of glasses in the system of BaCl2-Bi2O3-TeO2 
    KOSTKA, P.; FOURMENTIN, C.; BEDNÁROVÁ, Z.; NECAS, D.; LE COQ, D. (Tehnica UTM, 2019)
    Glass formation in BaCl2-Bi2O3-TeO2 was investigated by melting of starting mixtures in open silica tubes in flame. Chemically pure (purity 3N+) BaCl2, Bi2O3 and TeO2 were used as starting compounds. Large glass forming ...
  • Light- and voltage-controlled capacity of Cu-As2S3-Cu thin film cells for photodetection 
    GANEA, P.; LORINCZI, A.; SOCOL, G.; ZAMFIRA, S.; MATEI, E.; CREȚU, N.; POPESCU, M.; SAVA, F. (Tehnica UTM, 2019)
    Amorphous As2S3 thin films have remarkable electrical and optical properties, which make them solid candidates for a variety of applications and keep up the scientific interest to study them, even after decades from the ...
  • Thin films of porphyrin-chalcogenide nanocomposite for methane sensing at room temperature 
    LORINCZI, A.; FAGADAR-COSMA, E.; SOCOL, G.; MIHAILESCU, A.; MATEI, E.; SAVA, F.; STEFAN, M. (Tehnica UTM, 2019)
    Methane is one of the components of natural gas and has multiple applications. It is an odorless gas, flammable and combustible in the presence of oxygen. Its lower explosion limit (LEL) is 5.0 vol.%, which corresponds ...
  • Evidence of SnSb2Te4 rocksalt metastable phase of thin films grown by pulsed laser deposition 
    BILOVOL, V.; ROCCA, J.; FONTANA, M.; UREÑA, M. A. (Tehnica UTM, 2019)
    SnSb2Te4, an intermetallic compounds in the pseudobinary SnTe-Sb2Te3, looks as a promising candidate for phase-change material in non-volatile memories applications. Thin films having thickness from 50 to 150 nm were ...
  • Laser induced shanges of structure and optical properties of As-Sb-S amorphous films 
    DURKOT, M. O.; KRYUCHYN, A. A.; MAKAR, L. I.; MYKAYLO, O. A.; PETROV, V. V.; POP, M. M.; RUBISH, V. M.; YASINKO, T. I.; HOLOMB, R. M.; KOSTIUKEVICH, S. O. (Tehnica UTM, 2019)
    The report is devoted to the studies of laser irradiation and annealing influence on the optical characteristics and Raman spectra of As40-xSbxS60 (0 x 12) amorphous films prepared by the thermal evaporation of glasses ...
  • Study of specific heat and Gibb’s free energy of ternary chalcogenide glasses 
    SARASWATA, V. K.; TANWARB, N.; SARASWATC, Yo. K. (Tehnica UTM, 2019)
    In this paper, an effort has been made to study the change in some thermodynamic parameters (say specific heat and Gibb’s free energy) of GeSeIn ternary chalcogenide glasses under non-isothermal conditions. Change in ...
  • Imaging complex superimposed gratings by digital holographic microscopy 
    CAZAC, V. (Tehnica UTM, 2019)
    This paper concerns holographic gratings recording on chalcogenide nanomultilayers (NML) of the composition As2S3–Se. Photosensitive NML of As2S3–Se and constituents films of As2S3, Se were prepared by a computer controlled ...
  • Preparation of As2S3 thin layers for applications in optoelectronics 
    BORDIAN, O.T.; VERLAN, V. I.; CULEAC, I. P.; ZUBAREV, V. E.; MALAHOV, L. A. (Tehnica UTM, 2019)
    The experimental results on the technology of As2S3 thin films and their characteristization using optical methods as a study of surface plasmon resonance (SPR), a light modulators that contains an amorphous As2S3 films ...

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