Light- and voltage-controlled capacity of Cu-As2S3-Cu thin film cells for photodetection

Abstract

Amorphous As2S3 thin films have remarkable electrical and optical properties, which make them solid candidates for a variety of applications and keep up the scientific interest to study them, even after decades from the first results [1]. This composition has its optical absorption edge around the 500 nm, and shows a high optical transmission in the infrared (IR) and mid-infrared (MIR) spectral domain [2]. From structural point of view, a-As2S3 has a quite sparse network, able to accommodate certain ionic or atomic species [2].