Abstract:
This paper concerns holographic gratings recording on chalcogenide nanomultilayers
(NML) of the composition As2S3–Se. Photosensitive NML of As2S3–Se and constituents films of
As2S3, Se were prepared by a computer controlled cyclic thermal vacuum deposition through the
mask. The NML sample contained alternating As2S3 and Se nanolayers with thickness of each
nanolayer of 12 nm. Mass transport phenomenon is the physical process responsible for the
formation of the surface relief on this material during interferometric laser inscription.