Electrical properties of As2 S3 Ge8 - Te thin films grown from the vapor phase

CIOBANU, Marina; TSIULYANU, Dumitru

dc.contributor.author	CIOBANU, Marina
dc.contributor.author	TSIULYANU, Dumitru
dc.date.accessioned	2023-11-29T10:21:37Z
dc.date.available	2023-11-29T10:21:37Z
dc.date.issued	2020
dc.identifier.citation	CIOBANU, Marina, TSIULYANU, Dumitru. Effect of nanostructuring to response kinetics of tellurium thin films by nitrogen dioxide sensing. In: Electronic Processes in Organic and Inorganic Materials: proc. of ICEPOM-12, 1 – 5 June, 2020, Kamianets-Podіlskyi, Ukraine: Conference abstracts, 2020, p. 58.	en_US
dc.identifier.uri	http://repository.utm.md/handle/5014/25067
dc.description.abstract	This paper is devoted to study the electrical properties of a complex ChGS from the quaternary system As2S3Ge8-Te. Thin films of As2S3Ge8Te8, As2S3Ge8Te13, as well as the functional structures supplied with symmetrical electrodes of different metals, such as In, Au and Pt have been prepared and studied. Thin films were grown from priory synthetized materials, via thermal evaporation in vacuum of 10-4 Pa onto Pyrex or sintered Al2O3 substrates. The metallic electrodes have been deposited using the same method and similar technological conditions.	en_US
dc.language.iso	en	en_US
dc.publisher	Taylor & Francis, Inc. Molecular Crystals and Liquid Crystals	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	chalcogenide glassy semiconductors	en_US
dc.subject	thin films	en_US
dc.subject	vapor phase	en_US
dc.title	Electrical properties of As2 S3 Ge8 - Te thin films grown from the vapor phase	en_US
dc.type	Article	en_US