Sensitivity of nanostructured tellurium films to low - reactive gases

MOCREAC, O.; TSIULYANU, D.; AFANASIEV, A.

dc.contributor.author	MOCREAC, O.
dc.contributor.author	TSIULYANU, D.
dc.contributor.author	AFANASIEV, A.
dc.date.accessioned	2023-11-21T09:11:01Z
dc.date.available	2023-11-21T09:11:01Z
dc.date.issued	2019
dc.identifier.citation	MOCREAC, O., TSIULYANU, D., AFANASIEV, A. Sensitivity of nanostructured tellurium films to low - reactive gases. In: Nanoscience and Nanotechnology in Security and Protection Against CBRN Threats, 20 Sept., 2019, Sozopol, Bulgaria: Book of Abstracts, 2019 p. 29.	en_US
dc.identifier.uri	http://repository.utm.md/handle/5014/24939
dc.description.abstract	Electrical conductivity and impedance spectra of nanostructured tellurium thin films have been investigated in different gaseous media. The films were fabricated by thermal vacuum deposition of pure tellurium (purity 99.999 %) onto Pyrex glass or oxidized silicon substrates. It is shown that the grain dimensionality and properties of the grown Te films are determined either by the growth rate or post-deposition treatment. As shown by SEM, AFM and XRD, the rate of deposition most strongly influences the microstructure of the films and their gas sensing properties.	en_US
dc.language.iso	en	en_US
dc.publisher	NATO Advanced Study Institute	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	nanostructured tellurium films	en_US
dc.subject	gaseous media	en_US
dc.title	Sensitivity of nanostructured tellurium films to low - reactive gases	en_US
dc.type	Article	en_US