Chalcogenide based sensitive layers for work function gas and humidity sensors

TSIULYANU, D.; MARIAN, S.; MOCREAC, O.

dc.contributor.author	TSIULYANU, D.
dc.contributor.author	MARIAN, S.
dc.contributor.author	MOCREAC, O.
dc.date.accessioned	2023-11-21T08:49:55Z
dc.date.available	2023-11-21T08:49:55Z
dc.date.issued	2012
dc.identifier.citation	TSIULYANU, D., MARIAN, S., MOCREAC, O. Chalcogenide based sensitive layers for work function gas and humidity sensors. In: Сенсорна електроника та микросiстемнi технологii: тезi доповидей СЕМСТ-5-та Мiждународна наукова технична конференцiя, 4-8 червня, 2012, Одесса, Украина, 2012 p. 77. ISBN 978–966–190–577–0.	en_US
dc.identifier.isbn	978–966–190–577–0
dc.identifier.uri	http://repository.utm.md/handle/5014/24937
dc.description.abstract	In this work the authors report about characterization of chalcogenide based thin films, as a materials for gas – sensing applications. The sensing behavior of the As-S-Te-Ge films was tested with environmental pollutant gases such as NO2, CO, O3 and atmospheric humidity using the Kelvin probe technique at room temperature. A significant sensitivity has been observed for nitrogen dioxide. The detection range for NO2 was between 0.85 – 1.9 ppm in ambient air. The response and the recovery time are rapid with good reproducibility and high sensibility. The work function measurements showed, that chalcogenide semiconductors in question are well suited materials for the detection of not only small concentrations of NO2, but also for humidity sensing.	en_US
dc.language.iso	en	en_US
dc.publisher	Одеський нацiональный университет iменi I. I. Мечникова	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	chalcogenide based thin films	en_US
dc.subject	humidity sensors	en_US
dc.title	Chalcogenide based sensitive layers for work function gas and humidity sensors	en_US
dc.type	Article	en_US