dc.contributor.author | BODIUL, P. | |
dc.contributor.author | GITSU, D. | |
dc.contributor.author | IVANOV, G. | |
dc.contributor.author | NIKOLAEVA, A. | |
dc.contributor.author | PARA, G. | |
dc.date.accessioned | 2022-02-23T08:15:35Z | |
dc.date.available | 2022-02-23T08:15:35Z | |
dc.date.issued | 1999 | |
dc.identifier.citation | BODIUL, P., GITSU, D., IVANOV, G. et al. Peculiarities of impurity states in bismuth and doping anomaly of some transport phenomena I. Binary alloys. In: Journal of Thermoelectricity. 1999, N. 1, pp. 13-21. ISSN 1607-8829. | en_US |
dc.identifier.issn | 1607-8829 | |
dc.identifier.uri | https://www.elibrary.ru/item.asp?id=16371251 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/19459 | |
dc.description | Access full text – https://www.elibrary.ru/item.asp?id=16371251 | en_US |
dc.description.abstract | Generalizing data of the most typical peculiarities of influence of the impurities (isovalent (Sb, As), donor (Te, Se) and acceptor (Pb, Sn) ones) on the charge transport phenomena in bismuth are given. Proceedingfrom importance of the application aspect of the problem, in the main the most expressive experimental data and clear physical models are considered in order to avoid using of complex and awkward expressions. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Институт термоэлектричества Национальной академии наук и Министерства образования и науки Украины | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | impurities | en_US |
dc.subject | charge transport phenomena | en_US |
dc.subject | bismuth | en_US |
dc.title | Peculiarities of impurity states in bismuth and doping anomaly of some transport phenomena I. Binary alloys | en_US |
dc.type | Article | en_US |
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