IRTUM – Institutional Repository of the Technical University of Moldova
Influence of loading holding time under quasistatic indentation on electrical properties and phase transformations of silicon
JavaScript is disabled for your browser. Some features of this site may not work without it.
| dc.contributor.author | SHIKIMAKA, O. | |
| dc.contributor.author | PRISACARU, A. | |
| dc.contributor.author | BRUK, L. | |
| dc.contributor.author | USATYI, Yu. | |
| dc.contributor.author | BURLACU, A. | |
| dc.date.accessioned | 2021-05-17T11:00:16Z | |
| dc.date.available | 2021-05-17T11:00:16Z | |
| dc.date.issued | 2012 | |
| dc.identifier.citation | SHIKIMAKA, O., PRISACARU, A., BRUK, L., USATYI, Yu et al. Influence of loading holding time under quasistatic indentation on electrical properties and phase transformations of silicon. In: Surface Engineering and Applied Electrochemistry. 2012, V. 48, Iss. 5, pp. 444-449. ISSN 1934-8002. | en_US |
| dc.identifier.uri | https://doi.org/10.3103/S1068375512050122 | |
| dc.identifier.uri | http://repository.utm.md/handle/5014/14955 | |
| dc.description | Access full text - https://doi.org/10.3103/S1068375512050122 | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Springer Nature Switzerland | en_US |
| dc.rights | The quasistatic Vickers indentation of Si (100) were applied to investigate the influence of loading holding time on the changes of electrical resistance and phase transformation in the indentation zone. For all used loading regimes with different holding times (2 s, 10 s, 1 h and 10 h) in combination with constant loading-unloading rate (250 mN/s) the electrical resistance in the region of residual indentations was found to be lower than before indentation. It was shown that this is connected with the formation of semimetallic Si-III phase and amorphous Si of higher pressure induced by creep process developed under long lasting pressure. The longer the holding time, the greater lowering of electrical resistance in the indentation region was observed, with the exception of the holding time above 1 h, this being explained by a decelerating creep rate of Si for this interval of time leading to a halt of further extending of amorphous and Si-III regions of lower electrical resistance. | en_US |
| dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
| dc.subject | silicon | en_US |
| dc.title | Influence of loading holding time under quasistatic indentation on electrical properties and phase transformations of silicon | en_US |
| dc.type | Article | en_US |
Files in this item
The following license files are associated with this item:
This item appears in the following Collection(s)
Except where otherwise noted, this item's license is described as The quasistatic Vickers indentation of Si (100) were applied to investigate the influence of loading holding time on the changes of electrical resistance and phase transformation in the indentation zone. For all used loading regimes with different holding times (2 s, 10 s, 1 h and 10 h) in combination with constant loading-unloading rate (250 mN/s) the electrical resistance in the region of residual indentations was found to be lower than before indentation. It was shown that this is connected with the formation of semimetallic Si-III phase and amorphous Si of higher pressure induced by creep process developed under long lasting pressure. The longer the holding time, the greater lowering of electrical resistance in the indentation region was observed, with the exception of the holding time above 1 h, this being explained by a decelerating creep rate of Si for this interval of time leading to a halt of further extending of amorphous and Si-III regions of lower electrical resistance.