Liquid-phase epitaxy of AlGaAs heterostructures on profiled substrates

ANDREYEV, V. M.; EGOROV, V. V.; SYRBU, A. V.; TROFIM, V. G.; YAKOVLEV, V. P.

dc.contributor.author	ANDREYEV, V. M.
dc.contributor.author	EGOROV, V. V.
dc.contributor.author	SYRBU, A. V.
dc.contributor.author	TROFIM, V. G.
dc.contributor.author	YAKOVLEV, V. P.
dc.date.accessioned	2021-03-19T11:16:43Z
dc.date.available	2021-03-19T11:16:43Z
dc.date.issued	1980
dc.identifier.citation	ANDREYEV, V. M., EGOROV, V. V., SYRBU, A. V. Liquid-phase epitaxy of AlGaAs heterostructures on profiled substrates. In: Kristall und Technik. 1980, V. 15, N. 4, pp. 379-385.	en_US
dc.identifier.uri	https://doi.org/10.1002/crat.19800150402
dc.identifier.uri	http://repository.utm.md/handle/5014/13908
dc.description	Access full text - https://doi.org/10.1002/crat.19800150402	en_US
dc.description.abstract	A method of fabrication of planar local structures using the selective epitaxial growth of GaAs and AIGaAs layers from liquid phase on profiled GaAs substrates was developed. The planar regrowth of the recesses formed in GaAs substrates by local etching was performed using the anisotropy of epitaxial growth rates and also by providing the uniformity of mass flow to the surface of local epilayer. The developed method of localized structures fabrication was used for improving the characteristics of discrete light emitting diodes — LED and for fabrication of DLE monolithic arrays.	en_US
dc.language.iso	en	en_US
dc.publisher	WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	planar structures	en_US
dc.subject	epitaxial growth	en_US
dc.subject	layers	en_US
dc.title	Liquid-phase epitaxy of AlGaAs heterostructures on profiled substrates	en_US
dc.type	Article	en_US