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Liquid-phase epitaxy of AlGaAs heterostructures on profiled substrates

Show simple item record ANDREYEV, V. M. EGOROV, V. V. SYRBU, A. V. TROFIM, V. G. YAKOVLEV, V. P. 2021-03-19T11:16:43Z 2021-03-19T11:16:43Z 1980
dc.identifier.citation ANDREYEV, V. M., EGOROV, V. V., SYRBU, A. V. Liquid-phase epitaxy of AlGaAs heterostructures on profiled substrates. In: Kristall und Technik. 1980, V. 15, N. 4, pp. 379-385. en_US
dc.description Access full text - en_US
dc.description.abstract A method of fabrication of planar local structures using the selective epitaxial growth of GaAs and AIGaAs layers from liquid phase on profiled GaAs substrates was developed. The planar regrowth of the recesses formed in GaAs substrates by local etching was performed using the anisotropy of epitaxial growth rates and also by providing the uniformity of mass flow to the surface of local epilayer. The developed method of localized structures fabrication was used for improving the characteristics of discrete light emitting diodes — LED and for fabrication of DLE monolithic arrays. en_US
dc.language.iso en en_US
dc.publisher WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri *
dc.subject planar structures en_US
dc.subject epitaxial growth en_US
dc.subject layers en_US
dc.title Liquid-phase epitaxy of AlGaAs heterostructures on profiled substrates en_US
dc.type Article en_US

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