Remarks on the nature of Urbach absorption tail in glassy semiconductors

TSIULYANU, D. I.; MARIAN, S. I.

dc.contributor.author	TSIULYANU, D. I.
dc.contributor.author	MARIAN, S. I.
dc.date.accessioned	2021-03-18T12:28:09Z
dc.date.available	2021-03-18T12:28:09Z
dc.date.issued	1995
dc.identifier.citation	TSIULYANU, D. I., MARIAN, S. I. Remarks on the nature of Urbach absorption tail in glassy semiconductors. In: International Semiconductor Conference: Proceedings CAS'95, 11-14 Oct. 1995, Sinaia, Romania, 1995, pp. 399-402. ISBN:0-7803-2647-4.	en_US
dc.identifier.isbn	0-7803-2647-4
dc.identifier.uri	https://doi.org/10.1109/SMICND.1995.495045
dc.identifier.uri	http://repository.utm.md/handle/5014/13898
dc.description	Access full text: https://doi.org/10.1109/SMICND.1995.495045	en_US
dc.description.abstract	Exponential absorption edge of chalcogenide glassy alloys with sulfur content in the region of the topological transition is studied. It is shown that the slope of the tail (1//spl Delta/) depends on the mean coordination number (r~), the mean volume occupied by an atom (V) and the stoichiometry (/spl Omega/) of the materials, i. s. /spl Delta/=f(r~, V, /spl Omega/). Analysis of the experimental results for alloys As-S-Ge as well as for other amorphous materials, including the elemental ones indicates that the topological disorder controlled by r~, /spl Omega/ and V is the main reason in formation of the exponential absorption tail.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	glassy semiconductors	en_US
dc.subject	semiconductors	en_US
dc.subject	chalcogenide glassy alloys	en_US
dc.subject	glassy alloys	en_US
dc.subject	alloys	en_US
dc.subject	topological transition	en_US
dc.title	Remarks on the nature of Urbach absorption tail in glassy semiconductors	en_US
dc.type	Article	en_US