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Optical absorption of chalcogenide glassy photoresists As-S-Ge

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dc.contributor.author MARIAN, S.
dc.contributor.author TSIULYANU, D. I.
dc.date.accessioned 2021-01-26T14:27:54Z
dc.date.available 2021-01-26T14:27:54Z
dc.date.issued 1995
dc.identifier.citation MARIAN, S., TSIULYANU, D. I. Optical absorption of chalcogenide glassy photoresists As-S-Ge. In: International Conference on Microelectronics, 12-14 Sept. 1995, Nis, Serbia: proceedings, 1995, V. 1, pp. 69-71. ISBN 0-7803-2786-1. en_US
dc.identifier.uri https://doi.org/10.1109/ICMEL.1995.500837
dc.identifier.uri http://repository.utm.md/handle/5014/12576
dc.description Acces full text: https://doi.org/10.1109/ICMEL.1995.500837 en_US
dc.description.abstract The absorption edge of some chalcogenide glassy semiconductors (ChGS) As-S-Ge both in bulk and thin films is studied. The region of the Urbach tail is considered particularly as it determines the efficiency of photostructural transformations of ChGS used in high-resolution lithography. en_US
dc.language.iso en en_US
dc.publisher IEEE en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject chalcogenide glassy semiconductors en_US
dc.subject glassy semiconductors en_US
dc.subject semiconductors en_US
dc.subject thin films en_US
dc.subject films en_US
dc.subject lithography en_US
dc.title Optical absorption of chalcogenide glassy photoresists As-S-Ge en_US
dc.type Article en_US


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