On the Influence of Surface Phenomena Upon Charge Transport in Te-Based Glassy Semiconductors

TSIULYANU, Dumitru; CIOBANU, M.

dc.contributor.author	TSIULYANU, Dumitru
dc.contributor.author	CIOBANU, M.
dc.date.accessioned	2021-01-26T12:35:04Z
dc.date.available	2021-01-26T12:35:04Z
dc.date.issued	2018
dc.identifier.citation	TSIULYANU, Dumitru, CIOBANU, M. On the Influence of Surface Phenomena Upon Charge Transport in Te-Based Glassy Semiconductors. In: Physica Status Solidi (b). 2018, V. 255, N. 6, pp. 1700447. ISSN 1521-3951.	en_US
dc.identifier.uri	https://doi.org/10.1002/pssb.201700447
dc.identifier.uri	http://repository.utm.md/handle/5014/12573
dc.description	Access full text - https://doi.org/10.1002/pssb.201700447	en_US
dc.description.abstract	The effect of surface phenomena caused by adsorption of NO2, CO2, and H2O vapor on the charge transport in thin films of chalcogenide glassy semiconductors (ChGS) of the As2S3Ge8–Te system has been studied.	en_US
dc.language.iso	en	en_US
dc.publisher	WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	charge transport	en_US
dc.subject	glassy chalcogenides	en_US
dc.subject	chalcogenides	en_US
dc.subject	vapors	en_US
dc.subject	thin films	en_US
dc.subject	films	en_US
dc.subject	chalcogenide glassy semiconductors	en_US
dc.subject	glassy semiconductors	en_US
dc.subject	semiconductors	en_US
dc.title	On the Influence of Surface Phenomena Upon Charge Transport in Te-Based Glassy Semiconductors	en_US
dc.type	Article	en_US