High sensitive tellurium based NO2 gas sensor

TSIULYANU, D.; MARIAN, S.; MIRON, V.; LIESS, H.-D.

dc.contributor.author	TSIULYANU, D.
dc.contributor.author	MARIAN, S.
dc.contributor.author	MIRON, V.
dc.contributor.author	LIESS, H.-D.
dc.date.accessioned	2021-01-25T14:57:43Z
dc.date.available	2021-01-25T14:57:43Z
dc.date.issued	2001
dc.identifier.citation	TSIULYANU, D., MARIAN, S., MIRON, V. et al. High sensitive tellurium based NO2 gas sensor. In: Sensors and Actuators B: Chemical. 2001, V. 73, N. 1, pp. 35-39. ISSN 0925-4005.	en_US
dc.identifier.uri	https://doi.org/10.1016/S0925-4005(00)00659-6
dc.identifier.uri	http://repository.utm.md/handle/5014/12564
dc.description	Access full text - https://doi.org/10.1016/S0925-4005(00)00659-6	en_US
dc.description.abstract	For the first time it is shown, that tellurium based thin films exhibit high sensitivity to nitrogen dioxide at room temperature. The resistance of the tellurium films decreases reversibly in the presence of NO2. The sensitivity of this device depends on the gas concentration and it increases to lower concentrations less than 3ppm. The response time is considerably short and in the range of 2–3min.	en_US
dc.language.iso	en	en_US
dc.publisher	Elsevier	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	gas sensors	en_US
dc.subject	sensors	en_US
dc.subject	chalcogenide semiconductors	en_US
dc.subject	semiconductors	en_US
dc.subject	environmental monitoring	en_US
dc.title	High sensitive tellurium based NO2 gas sensor	en_US
dc.type	Article	en_US