Ge–As–Te-based gas sensor selective to low NO2 concentrations

MARIAN, S.; TSIULYANU, D.; LIESS, H.-D.

dc.contributor.author	MARIAN, S.
dc.contributor.author	TSIULYANU, D.
dc.contributor.author	LIESS, H.-D.
dc.date.accessioned	2021-01-25T14:43:27Z
dc.date.available	2021-01-25T14:43:27Z
dc.date.issued	2001
dc.identifier.citation	MARIAN, S., TSIULYANU, D., LIESS, H.-D. Ge–As–Te-based gas sensor selective to low NO2 concentrations. In: Sensors and Actuators B: Chemical. 2001, V. 78, N. 1, pp. 191-194. ISSN 0925-4005.	en_US
dc.identifier.uri	https://doi.org/10.1016/S0925-4005(01)00811-5
dc.identifier.uri	http://repository.utm.md/handle/5014/12563
dc.description	Access full text - https://doi.org/10.1016/S0925-4005(01)00811-5	en_US
dc.description.abstract	A new kind of gas sensor based on chalcogenide glassy semiconductors for the detection of nitrogen dioxide has been investigated. It contains a sandwich metal–semiconductor (Ge–As–Te ternary alloys)–metal structure which is used as chemical sensor for the detection of NO2 to concentrations in the ppm and sub-ppm ranges. The detection principle is based on the measurement of the conductivity of the sensitive film. The dependence of the sensitivity to the gas concentration has been studied. The NO2 response was found to be high and reversible. The response time was fast and the reproducibility satisfactory. The cross-sensitivity to interfering gases has been investigated. The chalcogenide-oxide–silicon FET-based (COSFET) sensor is presented as an application example of these layers. All measurements were performed at room temperature.	en_US
dc.language.iso	en	en_US
dc.publisher	Elsevier	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	gas sensors	en_US
dc.subject	sensors	en_US
dc.subject	chalcogenides	en_US
dc.subject	nitrogen dioxide	en_US
dc.subject	conductivity	en_US
dc.title	Ge–As–Te-based gas sensor selective to low NO2 concentrations	en_US
dc.type	Article	en_US