Dimorphite based gas sensitive thin films

MARIAN, S.; POTJE-KAMLOTH, K.; TSIULYANU, D.; LIESS, H.-D.

dc.contributor.author	MARIAN, S.
dc.contributor.author	POTJE-KAMLOTH, K.
dc.contributor.author	TSIULYANU, D.
dc.contributor.author	LIESS, H.-D.
dc.date.accessioned	2021-01-22T08:18:43Z
dc.date.available	2021-01-22T08:18:43Z
dc.date.issued	2000
dc.identifier.citation	MARIAN, S., POTJE-KAMLOTH, K., TSIULYANU, D. Dimorphite based gas sensitive thin films. In: Thin Solid Films. 2000, V. 359, N. 1, pp. 108-112. ISSN 0040-6090.	en_US
dc.identifier.uri	https://doi.org/10.1016/S0040-6090(99)00707-5
dc.identifier.uri	http://repository.utm.md/handle/5014/12534
dc.description	Access full text - https://doi.org/10.1016/S0040-6090(99)00707-5	en_US
dc.description.abstract	For the first time it was observed that thin films based on artificial dimorphite (As4S3) exhibit gas sensitivity at room temperature. A sandwich metal-semiconductor-metal (MSM) structure with dimorphite as the semiconducting material is used as chemical sensor for the detection of propylamine vapor. The gas induced shifts of the current–voltage characteristics as well as of the transient characteristics are studied. The interaction of propylamine vapor with dimorphite leads to an increase of the current, which indicates a gas induced doping effect. A dependence of the gas induced current on the applied voltage and on the gas concentration is found. Results are discussed in terms of gas controlled trapping of injected carriers from electrodes which influences the space charge limited current.	en_US
dc.language.iso	en	en_US
dc.publisher	Elsevier	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	chemical gas sensors	en_US
dc.subject	gas sensors	en_US
dc.subject	chalcogenides	en_US
dc.subject	propylamine	en_US
dc.title	Dimorphite based gas sensitive thin films	en_US
dc.type	Article	en_US