Characterization of tellurium-based films for NO2 detection

TSIULYANU, D.; TSIULYANU, A.; LIESS, H.-D.; EISELE, I.

dc.contributor.author	TSIULYANU, D.
dc.contributor.author	TSIULYANU, A.
dc.contributor.author	LIESS, H.-D.
dc.contributor.author	EISELE, I.
dc.date.accessioned	2021-01-21T15:02:15Z
dc.date.available	2021-01-21T15:02:15Z
dc.date.issued	2005
dc.identifier.citation	TSIULYANU, D., TSIULYANU, A., LIESS, H.-D. Characterization of tellurium-based films for NO2 detection. In: Thin Solid Films. 2005, V. 485, N. 1, pp. 252-256. ISSN 0040-6090.	en_US
dc.identifier.uri	https://doi.org/10.1016/j.tsf.2005.03.045
dc.identifier.uri	http://repository.utm.md/handle/5014/12530
dc.description	Access full text - https://doi.org/10.1016/j.tsf.2005.03.045	en_US
dc.description.abstract	Sensing characteristics of tellurium-based thin films for NO2 monitoring was studied systematically. The influence of contact materials, thermal treatment, temperature and thickness of the samples on the electrical conductivity and sensitivity to NO2 with respect to scanning electron microscopy analyses is given. The possibility is shown to optimize the properties of the films for the development of a simple and stable NO2 sensor device with rapid response/recovery time and low operating temperature. The sensing mechanism is discussed for the direct interaction of gaseous species with lone-pair electrons of chalcogen atoms.	en_US
dc.language.iso	en	en_US
dc.publisher	Elsevier	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	gas sensors	en_US
dc.subject	tellurium	en_US
dc.subject	nitrogen dioxide	en_US
dc.title	Characterization of tellurium-based films for NO2 detection	en_US
dc.type	Article	en_US