Chalcogenide semiconductor based sensor for fast NO/sub 2/ detection

TSIULYANU, D.; MARIAN, S.; MIRON, V.; POTJE-KAMLOTH, K.; LIESS, H.-D.

dc.contributor.author	TSIULYANU, D.
dc.contributor.author	MARIAN, S.
dc.contributor.author	MIRON, V.
dc.contributor.author	POTJE-KAMLOTH, K.
dc.contributor.author	LIESS, H.-D.
dc.date.accessioned	2021-01-21T14:28:48Z
dc.date.available	2021-01-21T14:28:48Z
dc.date.issued	2000
dc.identifier.citation	TSIULYANU, D., MARIAN, S., MIRON, V. Chalcogenide semiconductor based sensor for fast NO/sub 2/ detection. In: International Semiconductor Conference. 23rd Edition, 10-14 Oct. 2000, Sinaia, Romania: proceedings CAS, 2000, V. 21, pag. 377-380. ISBN 0-7803-5885-61.	en_US
dc.identifier.isbn	0-7803-5885-61
dc.identifier.uri	https://doi.org/10.1109/SMICND.2000.889114
dc.identifier.uri	http://repository.utm.md/handle/5014/12528
dc.description	Acces full text: https://doi.org/10.1109/SMICND.2000.889114	en_US
dc.description.abstract	For the first time if is shown that thin films based on tellurium alloys exhibit high sensitivity to nitrogen dioxide at room temperature. The resistance of the films decreases reversibly in the presence of NO/sub 2/. Sensitivity of the device depends on gas concentration and is better at concentrations less than 3 ppm. The response time is considerably short being in the range of 2-3 min.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	sensors	en_US
dc.subject	chalcogenides	en_US
dc.subject	semiconductors	en_US
dc.subject	thin films	en_US
dc.subject	films	en_US
dc.subject	tellurium alloys	en_US
dc.subject	nitrogen dioxide	en_US
dc.title	Chalcogenide semiconductor based sensor for fast NO/sub 2/ detection	en_US
dc.type	Article	en_US