dc.contributor.author | TSIULYANU, D. I. | |
dc.date.accessioned | 2021-01-21T14:11:30Z | |
dc.date.available | 2021-01-21T14:11:30Z | |
dc.date.issued | 1995 | |
dc.identifier.citation | TSIULYANU, D. I. Chalcogenide glassy-based photoresists for microelectronics. In: International Conference on Microelectronics, 12-14 Sept. 1995, Nis, Serbia: proceedings, 1995, V. 1, pag. 134-137. ISBN 0-7803-2786-1. | en_US |
dc.identifier.isbn | 0-7803-2786-1 | |
dc.identifier.uri | https://doi.org/10.1109/ICMEL.1995.500829 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/12527 | |
dc.description | Acces full text: https://doi.org/10.1109/ICMEL.1995.500829 | en_US |
dc.description.abstract | Possibilities of application in microelectronics of chalcogenide glassy semiconductors (ChGS) as inorganic high-resolution photoresists is treated. A brief consideration of three main effects: photostructural transformations, photo-doping and electrostimulated interaction of ChGS with some metals for lithography is given. The emphasis is put on the third effect which appears to be original and less known as well as on the technical features of lithography processes with ChGS. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | semiconductors | en_US |
dc.subject | chalcogenides | en_US |
dc.title | Chalcogenide glassy-based photoresists for microelectronics | en_US |
dc.type | Article | en_US |
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