Arsenic trisulphide in isotype amorphous–crystalline heterojunctions

TSIULYANU, D. I.; ANDRIESH, A. M.; KOLOMEYKO, E. P.

dc.contributor.author	TSIULYANU, D. I.
dc.contributor.author	ANDRIESH, A. M.
dc.contributor.author	KOLOMEYKO, E. P.
dc.date.accessioned	2021-01-21T12:40:54Z
dc.date.available	2021-01-21T12:40:54Z
dc.date.issued	1978
dc.identifier.citation	TSIULYANU, D. I., ANDRIESH, A. M., KOLOMEYKO, E. P. Arsenic trisulphide in isotype amorphous–crystalline heterojunctions. In: Physica Status Solidi (a). 1978, V. 50, N. 1, pp. 195-202. ISSN 1862-6319.	en_US
dc.identifier.uri	https://doi.org/10.1002/pssa.2210500123
dc.identifier.uri	http://repository.utm.md/handle/5014/12525
dc.description	Access full text - https://doi.org/10.1002/pssa.2210500123	en_US
dc.description.abstract	Results are given of electrophysical properties of isotype amorphous As2S3-crystalline p-Si heterojunctions. It is shown that the forward currents are limited by the space charge in As2S3 and the reverse ones are limited by emission through the barrier formed as a result of a discontinuity in the band edges at the interface. Using the respective theories describing the current flow laws in these two cases, the number of important parameters of vitreous arsenic trisulphide are evaluated, such as the trap density and the parameter of their distribution within a certain interval in the gap, the hole drift mobility, the electron affinity, and the work function. The possible energyband diagram of the heterojunction is presented.	en_US
dc.language.iso	en	en_US
dc.publisher	WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	heterojunctions	en_US
dc.subject	arsenic trisulphide	en_US
dc.title	Arsenic trisulphide in isotype amorphous–crystalline heterojunctions	en_US
dc.type	Article	en_US