Technology of Wide-Bandgap Diode Structures for Highfrequency Operation

MUTAMBA, K.; YILMAZOGLU, O.; COJOCARI, O.; SYDLO, C.; PAVLIDIS, D.; HARTNAGEL, H. L.

dc.contributor.author	MUTAMBA, K.
dc.contributor.author	YILMAZOGLU, O.
dc.contributor.author	COJOCARI, O.
dc.contributor.author	SYDLO, C.
dc.contributor.author	PAVLIDIS, D.
dc.contributor.author	HARTNAGEL, H. L.
dc.date.accessioned	2021-01-20T15:01:38Z
dc.date.available	2021-01-20T15:01:38Z
dc.date.issued	2006
dc.identifier.citation	MUTAMBA, K., YILMAZOGLU, O., COJOCARI, O. et al. Technology of Wide-Bandgap Diode Structures for Highfrequency Operation. In: International Semiconductor Conference: proceedings, 27-29 Sept. 2006, Sinaia, Romania, p. 85-92. ISBN 1-4244-0109-7.	en_US
dc.identifier.isbn	1-4244-0109-7
dc.identifier.uri	http://repository.utm.md/handle/5014/12513
dc.description	Acces full text: https://doi.org/10.1109/SMICND.2006.283938	en_US
dc.description.abstract	This paper reports on technology development aspects for GaN-based diodes in view of their application at high frequencies. The investigated devices include structures for transferred electron effects for operation at high electric-fields as well as heterostructure varactors (HBV) and Schottky diodes for frequency multiplication function. The impact of factors such as high threshold voltage for transferred electron effects, strong piezoelectric effects and Schottky barrier properties on device technologies and performances are addressed.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	diodes	en_US
dc.subject	frequencies	en_US
dc.subject	piezoelectric effects	en_US
dc.subject	Schottky barriers	en_US
dc.subject	electrons	en_US
dc.title	Technology of Wide-Bandgap Diode Structures for Highfrequency Operation	en_US
dc.type	Article	en_US