High Power High Efficiency 270-320 GHz Source Based on Discrete Schottky Diodes

MORO-MELGAR, D.; COJOCARI, O.; OPREA, I.

dc.contributor.author	MORO-MELGAR, D.
dc.contributor.author	COJOCARI, O.
dc.contributor.author	OPREA, I.
dc.date.accessioned	2021-01-16T13:06:21Z
dc.date.available	2021-01-16T13:06:21Z
dc.date.issued	2018
dc.identifier.citation	MORO-MELGAR, D., COJOCARI, O., OPREA, I. et al. High Power High Efficiency 270-320 GHz Source Based on Discrete Schottky Diodes. In: 15th European Radar Conference (EuRAD): proceedings, 26-28 Sept. 2018, Madrid, Spain, 2018, pp. 337-340. ISBN 978-2-87487-053-8.	en_US
dc.identifier.uri	https://doi.org/10.23919/EuRAD.2018.8546616
dc.identifier.uri	http://repository.utm.md/handle/5014/12471
dc.description	Acces full text: https://doi.org/10.23919/EuRAD.2018.8546616	en_US
dc.description.abstract	A 300 GHz source based on discrete Schottky diodes technology is reported in this work. The high frequency part developed by ACST consists of two high power and high efficiency doublers, one at 135-160 GHz and a second one at 270-320 GHz. Both doublers feature a single chip per module and do not use any power combining techniques. The 150 GHz and 300 GHz doublers are able to handle more than 400 mW and 100 mW input power and provide more than 140 mW and 30 mW output power, respectively. This is the most powerful 300 GHz source reported based on discrete Schottky diodes at this frequency range without using power combining.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	Schottky diodes	en_US
dc.subject	power sources	en_US
dc.title	High Power High Efficiency 270-320 GHz Source Based on Discrete Schottky Diodes	en_US
dc.type	Article	en_US