DC- and IF-noise performance optimization of GaAs Schottky diodes for THz applications

COJOCARI, O.; BIBER, S.; MOTTET, B.; RODRIGUEZ-GIRONES, M.; HARTNAGEL, H. L.; SCHMIDT, L.-P.

dc.contributor.author	COJOCARI, O.
dc.contributor.author	BIBER, S.
dc.contributor.author	MOTTET, B.
dc.contributor.author	RODRIGUEZ-GIRONES, M.
dc.contributor.author	HARTNAGEL, H. L.
dc.contributor.author	SCHMIDT, L.-P.
dc.date.accessioned	2021-01-16T09:52:39Z
dc.date.available	2021-01-16T09:52:39Z
dc.date.issued	2004
dc.identifier.citation	COJOCARI, O., BIBER, S., MOTTET, B. et al. DC- and IF-noise performance optimization of GaAs Schottky diodes for THz applications. In: Semiconductor Science and Technology. 2004, V. 20, N. 1, pp. 23-32. ISSN 0268-1242 (print), 1361-6641 (web).	en_US
dc.identifier.uri	https://doi.org/10.1088/0268-1242/20/1/004
dc.identifier.uri	http://repository.utm.md/handle/5014/12464
dc.description	Access full text – https://doi.org/10.1088/0268-1242/20/1/004	en_US
dc.description.sponsorship	This paper presents results which originated from a long-term systematic optimization of surface processing prior to anode formation of THz Schottky-based components. Particularly, four most promising surface-processing approaches are carefully investigated separately and in combination in order to understand the chemical and physical processes occurring on a GaAs surface. A reliable technological approach for anode formation is identified, which exhibits optimal diode characteristics and production repeatability. A model is proposed for the influence of each process on the subsequent one in the fabrication process sequence. DC- and IF-noise measurements are performed using an automated measurement system providing statistically significant data. Very good dc-parameters such as a series resistance of Rs = 15 Ω, an ideality factor N = 1.168, a reverse current Is = 0.024 fA and an IF-noise temperature of 257 K at 1 mA current bias with a good uniformity are achieved for non-cooled Schottky diodes with an anode diameter of 1 µm. The best noise figure is measured to be as low as 220 K at 3.8 GHz and 1 mA current bias.	en_US
dc.language.iso	en	en_US
dc.publisher	IOP Publishing	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	anodes	en_US
dc.subject	Schottky diodes	en_US
dc.subject	diodes	en_US
dc.subject	noise	en_US
dc.title	DC- and IF-noise performance optimization of GaAs Schottky diodes for THz applications	en_US
dc.type	Article	en_US