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600 GHz GaAs Schottky diode mixer in split-block technology
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| dc.contributor.author | SCHUR, J. | |
| dc.contributor.author | BIBER, S. | |
| dc.contributor.author | COJOCARI, O. | |
| dc.contributor.author | SCHMIDT, L.-P. | |
| dc.contributor.author | HARTNAGEL, H.-L. | |
| dc.date.accessioned | 2021-01-14T16:49:01Z | |
| dc.date.available | 2021-01-14T16:49:01Z | |
| dc.date.issued | 2013 | |
| dc.identifier.citation | SCHUR, J., BIBER, S., COJOCARI, O. et al. 600 GHz GaAs Schottky diode mixer in split-block technology. In: 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics: proceedings, 19-23 Sept. 2005, Williamsburg, USA, 2005, V. 2, pp. 469-470. | en_US |
| dc.identifier.uri | https://doi.org/10.1109/ICIMW.2005.1572616 | |
| dc.identifier.uri | http://repository.utm.md/handle/5014/12447 | |
| dc.description | Acces full text: https://doi.org/10.1109/ICIMW.2005.1572616 | en_US |
| dc.description.abstract | In this paper we present measurement results of a micro-machined split-block waveguide mixer for 600 GHz. The mixer implements a planar GaAs Schottky diode on a quartz substrate. Two different diode designs used for this mixer design are compared. The overall performance of the waveguide mixer is demonstrated by measurements of the mixer in a quasi-optical setup at 600 GHz. In this setup we are able to measure single sideband conversion losses of 9-14 dB at 600 GHz and voltage responsivities of 421-1690 mV/mW. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | IEEE | en_US |
| dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
| dc.subject | diodes | en_US |
| dc.subject | gallium arsenide | en_US |
| dc.subject | Schottky diodes | en_US |
| dc.subject | frequency | en_US |
| dc.subject | microwave technology | en_US |
| dc.subject | horn antennas | en_US |
| dc.subject | semiconductor diodes | en_US |
| dc.subject | milling | en_US |
| dc.subject | substrates | en_US |
| dc.subject | parasitic capacitance | en_US |
| dc.title | 600 GHz GaAs Schottky diode mixer in split-block technology | en_US |
| dc.type | Article | en_US |
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