dc.contributor.author | PURICA, M. | |
dc.contributor.author | RUSU, E. | |
dc.contributor.author | BUDIANU, E. | |
dc.contributor.author | NAN, S. | |
dc.date.accessioned | 2021-01-14T13:13:03Z | |
dc.date.available | 2021-01-14T13:13:03Z | |
dc.date.issued | 1998 | |
dc.identifier.citation | PURICA, M., RUSU, E., BUDIANU, E. et al. ZnO/InP thin film heterojunction for photovoltaic applications. In: International Semiconductor Conference: proceedings CAS'98, 6-10 Oct. 1998, Sinaia, Romania, 1998, V. 2, pp. 515-518, Cat. No. 98TH8351. | en_US |
dc.identifier.uri | https://doi.org/10.1109/SMICND.1998.733800 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/12443 | |
dc.description | Acces full text: https://doi.org/10.1109/SMICND.1998.733800 | en_US |
dc.description.abstract | A ZnO/InP heterojunction was obtained by the ZnO thin film deposition on p-InP epitaxial layer by the decomposition of metalorganic compounds as Zn acetylacetonate. The surface morphology and measurements of optoelectronical parameters in visible spectral range demonstrate the utility of this heterojunction in photodetection and photovoltaic applications. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | thin films | en_US |
dc.subject | films | en_US |
dc.subject | metalorganic compounds | en_US |
dc.subject | heterojunctions | en_US |
dc.subject | photodetection | en_US |
dc.subject | photovoltaic applications | en_US |
dc.title | ZnO/InP thin film heterojunction for photovoltaic applications | en_US |
dc.type | Article | en_US |
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