ZnO thin film optical window as partner for photodetecting heterostructures on Si and InP

BUDIANU, E.; PURICA, M.; GAVRILA, R.; NASTASE, S.; RUSU, E.; SLOBODCHIKOV, S. V.; TURCU, M.

dc.contributor.author	BUDIANU, E.
dc.contributor.author	PURICA, M.
dc.contributor.author	GAVRILA, R.
dc.contributor.author	NASTASE, S.
dc.contributor.author	RUSU, E.
dc.contributor.author	SLOBODCHIKOV, S. V.
dc.contributor.author	TURCU, M.
dc.date.accessioned	2021-01-14T12:38:35Z
dc.date.available	2021-01-14T12:38:35Z
dc.date.issued	1999
dc.identifier.citation	BUDIANU, E., PURICA, M., GAVRILA, R. et al. ZnO thin film optical window as partner for photodetecting heterostructures on Si and InP. In: International Semiconductor Conference: proceedings CAS '99, 5-9 Oct. 1999, Sinaia, Romania, 1999, V. 1, pp. 389-392, Cat. No. 99TH8389.	en_US
dc.identifier.uri	https://doi.org/10.1109/SMICND.1999.810544
dc.identifier.uri	http://repository.utm.md/handle/5014/12441
dc.description	Acces full text: https://doi.org/10.1109/SMICND.1999.810544	en_US
dc.description.abstract	Thin films of ZnO were deposited by thermal decomposition of Zn(C/sub 5/H/sub 7/O/sub 2/)/sub 2/ on semiconductor substrate, n-type silicon, p-type InP and also on transparent glass substrate. The heterostructures of ZnO/Si and ZnO/InP were prepared and investigated for optical properties by spectrophotometry and surface morphology by AFM. The lateral photovoltage characteristic and surface roughness demonstrate availability of heterostructures with ZnO thin film for optoelectronic devices.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	thin films	en_US
dc.subject	films	en_US
dc.subject	semiconductors	en_US
dc.subject	heterostructures	en_US
dc.subject	optoelectronic devices	en_US
dc.title	ZnO thin film optical window as partner for photodetecting heterostructures on Si and InP	en_US
dc.type	Article	en_US