dc.contributor.author | PURICA, M. | |
dc.contributor.author | BUDIANU, E. | |
dc.contributor.author | RUSU, E. | |
dc.contributor.author | DANILA, M. | |
dc.contributor.author | GAVRILA, R. | |
dc.date.accessioned | 2021-01-14T10:32:32Z | |
dc.date.available | 2021-01-14T10:32:32Z | |
dc.date.issued | 1998 | |
dc.identifier.citation | PURICA, M., BUDIANU, E., RUSU, E. et al. Structural and optoelectrical investigation of transparent and conductive ZnO thin films prepared by chemical vapor deposition. In: International Semiconductor Conference: proceedings . CAS 2000, 10-14 Oct. 2000, Sinaia, Romania, V. 1, pp. 159-162, Cat. No. 00TH8486. | en_US |
dc.identifier.uri | https://doi.org/10.1109/SMICND.2000.890210 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/12438 | |
dc.description | Acces full text: https://doi.org/10.1109/SMICND.2000.890210 | en_US |
dc.description.abstract | Transparent and conductive ZnO thin films have been prepared by a method derived from chemical vapor deposition using Zn (C/sub 5/H/sub 7/O/sub 2/)/sub 2/ as Zn source. The deposited thin ZnO layers of /spl sim/0,1 /spl mu/m thickness on Si and InP semiconductor substrates have been investigated with respect to crystalline phase by X-ray diffraction (XRD), by AFM for surface morphology, spectrophotometric measurements in UV-VIS-NIR spectral range and optoelectrical measurements of ZnO/semiconductor heterostructures. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | thin films | en_US |
dc.subject | films | en_US |
dc.subject | vapor depositions | en_US |
dc.subject | depositions | en_US |
dc.subject | semiconductors | en_US |
dc.subject | heterostructures | en_US |
dc.title | Structural and optoelectrical investigation of transparent and conductive ZnO thin films prepared by chemical vapor deposition | en_US |
dc.type | Article | en_US |
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