dc.contributor.author | BUDIANU, E. | |
dc.contributor.author | PURICA, M. | |
dc.contributor.author | RUSU, E. | |
dc.contributor.author | MANEA, E. | |
dc.contributor.author | GAVRILA, R. | |
dc.date.accessioned | 2021-01-13T18:02:11Z | |
dc.date.available | 2021-01-13T18:02:11Z | |
dc.date.issued | 2002 | |
dc.identifier.citation | BUDIANU, E., PURICA, M., RUSU, E. et al. Polysilicon thin layers for photovoltaic applications. In: International Semiconductor Conference: proceedings, 8-12 Oct. 2002, Sinaia, Romania, 2002, pp. 215-218. | en_US |
dc.identifier.uri | https://doi.org/10.1109/SMICND.2002.1105834 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/12434 | |
dc.description | Acces full text: https://doi.org/10.1109/SMICND.2002.1105834 | en_US |
dc.description.abstract | Thin layers of polycrystalline silicon as the optically absorbing material for photovoltaic devices represents a promising way for simultaneously achieving good performances and low manufacturing cost. In this paper, the preparation of polysilicon thin layers together with technological process for a p-i-n type photovoltaic cell fabrication are presented. The crystalline structure, surface morphology and optical properties were investigated by AFM technique, X-ray diffraction and spectrophotometer measurements. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | thin layers | en_US |
dc.subject | layers | en_US |
dc.subject | polycrystalline silicon | en_US |
dc.subject | silicon | en_US |
dc.subject | photovoltaic devices | en_US |
dc.title | Polysilicon thin layers for photovoltaic applications | en_US |
dc.type | Article | en_US |
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