Photoluminescence and resonant Raman scattering in highly conductive ZnO layers

ZALAMAI, V. V.; URSAKI, V. V.; RUSU, E. V.; ARABADJI, P.; TIGINYANU, I. M.; SIRBU, L.

dc.contributor.author	ZALAMAI, V. V.
dc.contributor.author	URSAKI, V. V.
dc.contributor.author	RUSU, E. V.
dc.contributor.author	ARABADJI, P.
dc.contributor.author	TIGINYANU, I. M.
dc.contributor.author	SIRBU, L.
dc.date.accessioned	2021-01-13T16:58:04Z
dc.date.available	2021-01-13T16:58:04Z
dc.date.issued	2004
dc.identifier.citation	ZALAMAI, V. V., URSAKI, V. V., RUSU, E. V. et al. Photoluminescence and resonant Raman scattering in highly conductive ZnO layers. In: Applied Physics Letters. 2004, V. 84, Nr. 25, pp. 5168-5170. ISSN 0003-6951.	en_US
dc.identifier.uri	https://doi.org/10.1063/1.1763980
dc.identifier.uri	http://repository.utm.md/handle/5014/12432
dc.description	Access full text – https://doi.org/10.1063/1.1763980	en_US
dc.description.abstract	Photoluminescence (PL) and resonant Raman scattering (RRS) excited by the 351.1nm line of an Ar+ laser were studied in highly conductive ZnO layers deposited by thermal decomposition of Zn(C5H7O2)2 metalorganic compound on porous InP substrates. The emission spectra consist of multiphonon RRS lines superimposed on a broad asymmetric PL band with the maximum at 3.36eV. The occurrence of PL and RRS is attributed to tailing of the density of states caused by potential fluctuations due to randomly distributed intrinsic defects.	en_US
dc.language.iso	en	en_US
dc.publisher	American Institute of Physics	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	photoluminescence	en_US
dc.subject	Raman scattering	en_US
dc.subject	scattering	en_US
dc.subject	layers	en_US
dc.subject	metalorganic compounds	en_US
dc.title	Photoluminescence and resonant Raman scattering in highly conductive ZnO layers	en_US
dc.type	Article	en_US