Photoelectrical properties of isotype heterostructure with Schottky barrier Pd-p-InP/p-InGaAs/p-InP

RUSU, E. V.; SLOBODCHIKOV, S. V.; SALIKHOV, H. M.; TURCU, M.

dc.contributor.author	RUSU, E. V.
dc.contributor.author	SLOBODCHIKOV, S. V.
dc.contributor.author	SALIKHOV, H. M.
dc.contributor.author	TURCU, M.
dc.date.accessioned	2021-01-13T12:07:31Z
dc.date.available	2021-01-13T12:07:31Z
dc.date.issued	1998
dc.identifier.citation	RUSU, E. V., SLOBODCHIKOV, S. V., SALIKHOV, H. M. et al. Photoelectrical properties of isotype heterostructure with Schottky barrier Pd-p-InP/p-InGaAs/p-InP. In: Second International Conference on Advanced Semiconductor Devices and Microsystems: proceedings, ASDAM '98, 5-7 Oct. 1998, Smolenice Castle, Slovakia, 1998, pp. 75-78, Cat. No.98EX172.	en_US
dc.identifier.uri	https://doi.org/10.1109/ASDAM.1998.730170
dc.identifier.uri	http://repository.utm.md/handle/5014/12431
dc.description	Acces full text: https://doi.org/10.1109/ASDAM.1998.730170	en_US
dc.description.abstract	The electrical and photoelectrical characteristics of the isotype p-InP/p-InGaAs heterostructure with the Pd-p-InP Schottky barrier as well as the impact of 500 ppm H/sub 2/ atmosphere on these characteristics have been studied. The main change of photo-emf in the gas environment was found to be around /spl lambda/(max)/sup 1/=0.90 /spl mu/m in the Schottky diode photoresponse spectrum. This behaviour is determined by the change of interface properties and existence of deep level traps in the band gap of the InP layer.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	isotype heterostructures	en_US
dc.subject	heterostructures	en_US
dc.subject	Schottky diodes	en_US
dc.subject	diodes	en_US
dc.title	Photoelectrical properties of isotype heterostructure with Schottky barrier Pd-p-InP/p-InGaAs/p-InP	en_US
dc.type	Article	en_US