Optical and structural investigation of ZnO thin films prepared by chemical vapor deposition (CVD)

PURICA, M.; BUDIANU, E.; RUSU, E.; DANILA, M.; GAVRILA, R.

dc.contributor.author	PURICA, M.
dc.contributor.author	BUDIANU, E.
dc.contributor.author	RUSU, E.
dc.contributor.author	DANILA, M.
dc.contributor.author	GAVRILA, R.
dc.date.accessioned	2021-01-13T11:27:57Z
dc.date.available	2021-01-13T11:27:57Z
dc.date.issued	2002
dc.identifier.citation	PURICA, M., BUDIANU, E., RUSU, E. et al. Optical and structural investigation of ZnO thin films prepared by chemical vapor deposition (CVD). In: Thin Solid Films, 2002, V. 403-404, pp. 485-488. ISSN 0040-6090.	en_US
dc.identifier.uri	https://doi.org/10.1016/S0040-6090(01)01544-9
dc.identifier.uri	http://repository.utm.md/handle/5014/12429
dc.description	Access full text – https://doi.org/10.1016/S0040-6090(01)01544-9	en_US
dc.description.abstract	Transparent and conductive ZnO thin films have been prepared by a method derived from chemical vapor deposition using Zn (C5H7O2)2 as Zn source. The deposited thin ZnO layers of ∼0.1 μm thickness on Si and InP semiconductor substrates, have been investigated with respect to the crystalline phase by X-ray diffraction (XRD), and surface morphology by atomic force microscopy (AFM). Spectrophotometric measurements in the ultraviolet-visible-near infrared spectral range and optoelectrical measurements of ZnO/semiconductor heterostructures have been performed.	en_US
dc.language.iso	en	en_US
dc.publisher	Elservier	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	films	en_US
dc.subject	X-ray diffractions	en_US
dc.subject	spectra	en_US
dc.subject	photovoltaic applications	en_US
dc.title	Optical and structural investigation of ZnO thin films prepared by chemical vapor deposition (CVD)	en_US
dc.type	Article	en_US