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Optical and electrical properties of the CdS/InP heterostructures solar cells

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dc.contributor.author SLOBODCHIKOV, S. V.
dc.contributor.author RUSU, E.
dc.contributor.author ARABADJI, P.
dc.contributor.author PURICA, M.
dc.contributor.author BUDIANU, E.
dc.date.accessioned 2021-01-13T11:07:41Z
dc.date.available 2021-01-13T11:07:41Z
dc.date.issued 2004
dc.identifier.citation SLOBODCHIKOV, S. V., RUSU, E., ARABADJI, P. et al. Optical and electrical properties of the CdS/InP heterostructures solar cells. In: International Semiconductor Conference: proceedings, CAS 2004, 4-6 October 2004, Sinaia, Romania, 2004, pp. 224. IEEE Cat. No. 04TH8748. en_US
dc.identifier.uri https://doi.org/10.1109/CRMICO.2004.183319
dc.identifier.uri http://repository.utm.md/handle/5014/12428
dc.description Acces full text: https://doi.org/10.1109/CRMICO.2004.183319 en_US
dc.description.abstract Technological procedures of solar cells fabrication based on n/sup +/-CdS/p-p/sup +/-InP heterostructures are presented. The conversion efficiency under AM 1.5 illumination condition of the obtained solar cell was /spl sim/12.6% at I/sub SC/ = 16mA/cm/sup 2/, U/sub OC/ = (0.74-0.78) V. The charge transport mechanism in solar cells in the temperature range of (100-300) K has been investigated, it has been established that direct current is determined either by charge carrier tunneling through local centres (low temperature) or by recombination processes in the charge depleted region. The heterojunction breakdown mechanism is determined by charge carrier tunneling processes. en_US
dc.language.iso en en_US
dc.publisher IEEE en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject heterostructures en_US
dc.subject solar cells en_US
dc.subject transport mechanism en_US
dc.subject tunneling en_US
dc.title Optical and electrical properties of the CdS/InP heterostructures solar cells en_US
dc.type Article en_US


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