High sensitivity and low dark current PIN photodiode with homojunction in n-InGaAaS/InP isotype heterostructure

BUDIANU, E.; PURICA, M.; RUSU, E.; NAN, S.

dc.contributor.author	BUDIANU, E.
dc.contributor.author	PURICA, M.
dc.contributor.author	RUSU, E.
dc.contributor.author	NAN, S.
dc.date.accessioned	2021-01-12T18:42:40Z
dc.date.available	2021-01-12T18:42:40Z
dc.date.issued	1997
dc.identifier.citation	BUDIANU, E., PURICA, M., RUSU, E. et al. High sensitivity and low dark current PIN photodiode with homojunction in n-InGaAaS/InP isotype heterostructure. In: International Semiconductor Conference: proceedings CAS '97, 20th Edition, 7-11 Oct. 1997, Sinaia, Romania, 1997, V. 2, pp. 485-488.	en_US
dc.identifier.uri	https://doi.org/10.1109/SMICND.1997.651264
dc.identifier.uri	http://repository.utm.md/handle/5014/12421
dc.description	Acces full text: https://doi.org/10.1109/SMICND.1997.651264	en_US
dc.description.abstract	The preparation and properties of Zn-diffusion homojunction InP/In/sub 0.53/Ga/sub 0.47/As photodiodes capable to operate in the 0.8-1.7 /spl mu/m wavelength range are described. These PIN photodiodes exhibit a sensitivity of 0.3 A/W at 0.8 /spl mu/m wavelength and 0.82 A/W at 1.3 /spl mu/m, a generation-recombination limited dark current of 10/sup -7/ A/mm/sup 2/ and 140 ps risetime.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	photodiodes	en_US
dc.subject	homojunctions	en_US
dc.subject	isotype heterostructures	en_US
dc.subject	heterostructures	en_US
dc.title	High sensitivity and low dark current PIN photodiode with homojunction in n-InGaAaS/InP isotype heterostructure	en_US
dc.type	Article	en_US