The fundamental absorption edge of PbGa2S4

NEUMANN, H.; HÖRIG, W.; NOOKE, G.; SYRBU, N. N.

dc.contributor.author	NEUMANN, H.
dc.contributor.author	HÖRIG, W.
dc.contributor.author	NOOKE, G.
dc.contributor.author	SYRBU, N. N.
dc.date.accessioned	2021-01-11T08:59:38Z
dc.date.available	2021-01-11T08:59:38Z
dc.date.issued	1988
dc.identifier.citation	NEUMANN, H., HÖRIG, W., NOOKE, G. et al. The fundamental absorption edge of PbGa2S4. In: Solid State Communications, 1988, V. 65, N. 2, pp. 155-157. ISSN 0038-1098.	en_US
dc.identifier.uri	https://doi.org/10.1016/0038-1098(88)90677-1
dc.identifier.uri	http://repository.utm.md/handle/5014/12396
dc.description	Access full text – https://doi.org/10.1016/0038-1098(88)90677-1	en_US
dc.description.abstract	Optical absorption spectra of PbGa2S4 are measured in the photon energy range from 2.0 to 3.2 eV and for temperatures between 32 and 300 K. PbGa2S4 is found to be an indirect-gap semiconductor with a gap energy of 2.84 eV at room temperature. At slightly higher energies the fundamental edge is followed by a direct gap with an energy of 2.91 eV at 300 K. The results obtained are compared with previous measurements and with experimental data for CdGa2S4 having similar near-edge optical properties.	en_US
dc.language.iso	en	en_US
dc.publisher	Elservier	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	optical absorptions	en_US
dc.subject	spectra	en_US
dc.subject	photons	en_US
dc.subject	semiconductors	en_US
dc.title	The fundamental absorption edge of PbGa2S4	en_US
dc.type	Article	en_US