Spectroscopical study of amorphous AsSe films containing tin impurity

IOVU, M. S.; POPESCU, M.; SYRBU, N. N.; SHUTOV, S. D.; VASILIEV, I. A.; REBEJA, S.; COLOMEICO, E.

dc.contributor.author	IOVU, M. S.
dc.contributor.author	POPESCU, M.
dc.contributor.author	SYRBU, N. N.
dc.contributor.author	SHUTOV, S. D.
dc.contributor.author	VASILIEV, I. A.
dc.contributor.author	REBEJA, S.
dc.contributor.author	COLOMEICO, E.
dc.date.accessioned	2021-01-06T14:16:12Z
dc.date.available	2021-01-06T14:16:12Z
dc.date.issued	1998
dc.identifier.citation	IOVU, M. S., POPESCU, M., SYRBU, N. N. et al. Spectroscopical study of amorphous AsSe films containing tin impurity. In: International Semiconductor Conference: proceedings CAS '98, 6-10 Oct. 1998, Sinaia, Romania, 1998, V. 1, pp. 105-108. Cat. No. 98TH8351.	en_US
dc.identifier.uri	https://doi.org/10.1109/SMICND.1998.732299
dc.identifier.uri	http://repository.utm.md/handle/5014/12390
dc.description	Acces full text: https://doi.org/10.1109/SMICND.1998.732299	en_US
dc.description.abstract	Optical absorption of thermally deposited AsSe films doped with Sn impurity (1 to 10 at.%) is studied in a wide energy interval from 0.8 to 6.2 eV by combination of reflection, absorption, photoresponse and photocapacitance spectroscopies. The effect of tin impurity on both extended and localized electronic states is revealed. Over the fundamental edge absorption region a correlation between the band tail width and optical gap is demonstrated for various tin concentrations.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	films	en_US
dc.subject	amorphous films	en_US
dc.subject	optical absorptions	en_US
dc.title	Spectroscopical study of amorphous AsSe films containing tin impurity	en_US
dc.type	Article	en_US