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Photoelectrical properties of a Au-CdIn2S4 surface-barrier diode

Show simple item record RADAUTSAN, S. I. MOLODYAN, I. P. BULYARSKII, S. V. SYRBU, N. N. TEZLEVAN, V. E. 2021-01-05T17:07:40Z 2021-01-05T17:07:40Z 1974
dc.identifier.citation RADAUTSAN, S. I., MOLODYAN, I. P., BULYARSKII, S. V. Photoelectrical properties of a Au-CdIn2S4 surface-barrier diode. In: Physica Status Solidi (a), 1974, V. 21, N. 2, pp. 617-622. ISSN 0869-5652. en_US
dc.description Access full text – en_US
dc.description.abstract The photoelectrical properties of Schottky barriers Au-CdIn2S4 in a broad energy region have been considered. The optical direct and indirect transitions and the spin-orbit splittings of zones Γ15(Γ7), Γ15(Γ8) in L1(L6) and Γ1(Γ6) have been revealed. The fine structure in the differential spectra of photoconductivity due to the phonons at the edge and in the centre of the Brillouin zone were observed. en_US
dc.language.iso en en_US
dc.publisher WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri *
dc.subject diodes en_US
dc.subject Schottky barriers en_US
dc.subject photoconductivity en_US
dc.subject phonons en_US
dc.title Photoelectrical properties of a Au-CdIn2S4 surface-barrier diode en_US
dc.type Article en_US

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