Excitonic spectra in HgGa2Se4 crystals

SYRBU, N. N.; ZALAMAI, V. V.

dc.contributor.author	SYRBU, N. N.
dc.contributor.author	ZALAMAI, V. V.
dc.date.accessioned	2020-12-29T11:32:11Z
dc.date.available	2020-12-29T11:32:11Z
dc.date.issued	2018
dc.identifier.citation	SYRBU, N. N., ZALAMAI, V. V. Excitonic spectra in HgGa2Se4 crystals. In: Optical Materials, 2018, V. 76, pp. 344-352. ISSN 0925-3467.	en_US
dc.identifier.uri	https://doi.org/10.1016/j.optmat.2018.01.002
dc.identifier.uri	http://repository.utm.md/handle/5014/12335
dc.description	Access full text – https://doi.org/10.1016/j.optmat.2018.01.002	en_US
dc.description.abstract	Ground and excited states of four excitonic series (A, B, C and D) were discovered in HgGa2Se4 crystals at 10 K. Parameters of excitons and bands were determined. An effective mass of electrons mc is equal to 0.26m0 and masses of holes mv1, mv2 and mv3 are equal to 2.48m0, 2.68m0 and 1.6m0 respectively in Γ point of Brilloin zone. Valence bands splitting by crystal field (Δcf = 70 meV) and spin-orbital interaction (Δso = 250 meV) were estimated in Brillouin zone center. Optical functions (n, ε1 and ε2) for polarizations E⊥c and E\|\|c in electron transitions region (2–6 eV) were calculated by Kramers-Kronig method. The discovered features were discussed on a base of the existing theoretical energetical band structure calculations and excitonic bands symmetries in k = 0 Brillouin zone for chalcopyrite crystals. The resonance Raman scattering was investigated.	en_US
dc.language.iso	en	en_US
dc.publisher	Elservier	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	resonance Raman scattering	en_US
dc.subject	Raman scattering	en_US
dc.subject	excitonic-polariton branches	en_US
dc.subject	electrons	en_US
dc.subject	holes	en_US
dc.subject	luminescence	en_US
dc.subject	crystals	en_US
dc.title	Excitonic spectra in HgGa2Se4 crystals	en_US
dc.type	Article	en_US