Electronic and optical properties of HgIn2S4 thiospinels

SYRBU, N. N.; TIRON, A.; ZALAMAI, V. V.

dc.contributor.author	SYRBU, N. N.
dc.contributor.author	TIRON, A.
dc.contributor.author	ZALAMAI, V. V.
dc.date.accessioned	2020-12-23T17:09:23Z
dc.date.available	2020-12-23T17:09:23Z
dc.date.issued	2019
dc.identifier.citation	SYRBU, N. N., TIRON, A., ZALAMAI, V. V. Electronic and optical properties of HgIn2S4 thiospinels. In: Materials Research Express, 2019, V. 6, Nr. 7, pp. 076202. ISSN 2053-1591.	en_US
dc.identifier.uri	https://doi.org/10.1088/2053-1591/ab17b0
dc.identifier.uri	http://repository.utm.md/handle/5014/12292
dc.description	Access full text – https://doi.org/10.1088/2053-1591/ab17b0	en_US
dc.description.abstract	Photoluminescence (PL), transmission (T), reflection (R), wavelength modulated transmission (ΔT/Δλ) and reflection (ΔR/Δλ) spectra of thiospinel HgIn2S4 crystals were investigated in temperature interval form 10 to 300 K. The band gap 1.64 eV (300 K) and 1.666 eV (10 K) are formed by electron transitions from L to Γ points of Brillouin zone. The edge temperature shift coefficient β (ΔEg/ΔT) is equal to 4.3 10–3 eV K−1. The direct energy gap in Γ point (Egdir) corresponds to 1.748 eV. The top valence bands in k = 0 are split by the crystal field on 25 meV. Direct electron transitions a1–a7, observed in energy range 1–6 eV, were interpreted conform the theoretically calculated band structure. The optical functions (n, k, ε1 and ε2) were determined by Kramers-Kronig analysis.	en_US
dc.language.iso	en	en_US
dc.publisher	IOP Publishing	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	photoluminescence	en_US
dc.subject	wavelength	en_US
dc.subject	crystals	en_US
dc.title	Electronic and optical properties of HgIn2S4 thiospinels	en_US
dc.type	Article	en_US