Characterization of GaN thin films and Eu-doped GaN nanowires and nanoparticles produced on the basis of Ga2O3 nanomaterial

Abstract

Due to advantageous properties such as wide bandgap, pronounced chemical and thermal stability, gallium nitride is currently considered as one of the most important semiconductor materials for practical applications. We present results of preparation of Eu doped GaN nanoparticles and nanowires by using Ga2O3 as source nanomaterial. Monoclinic Ga2O3 nanoparticles and nanowires have been prepared by hydrothermal growth with high purity Ga(NO3)3 9H2O and 1M precursors. The geometrical parameters of the nanomaterial were found to be determined by the duration of the hydrothermal process, Ga2O3 nanoparticles or nanowires being produced. The hydrothermal process lasts for 5 to 24 hours at the temperature of 220oC. The Ga2O3 nanomaterial is transformed unto GaN nanoparticles and nanowires by nitridation in a flow of NH3 and H2. The photoluminescence properties of Eu doped Ga2O3 and GaN nanomaterial were investigated under laser excitation. The photoluminescence proprieties of GaN films obtained by magnetron sputtering were compared with those of GaN nanowires and nanoparticles. The produced material was also investigated by means of XRD analysis, Raman scattering and Fourier transform infrared (FTIR) spectroscopy.