dc.contributor.author | LANGA, S. | |
dc.contributor.author | TIGINYANU, I. M. | |
dc.contributor.author | CARSTENSEN, J. | |
dc.contributor.author | CHRISTOPHERSEN, M. | |
dc.contributor.author | FÖLL, H. | |
dc.date.accessioned | 2020-12-02T14:42:53Z | |
dc.date.available | 2020-12-02T14:42:53Z | |
dc.date.issued | 2003 | |
dc.identifier.citation | LANGA, S., TIGINYANU, I. M., CARSTENSEN, J. et al. Self-organized growth of single crystals of nanopores. In: Applied Physics Letters. 2003, V. 82, Nr. 2, pp. 278-280. ISSN 0003-6951. | en_US |
dc.identifier.uri | https://doi.org/10.1063/1.1537868 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/11897 | |
dc.description | Access full text - https://doi.org/10.1063/1.1537868 | en_US |
dc.description.abstract | Self-organized single crystalline two-dimensional hexagonal arrays of pores in InP semiconductor compound are reported. We show that the self-arrangement of pores can be obtained on n-type substrates with (100) and (111) orientations. The long-range order in pore distribution evidenced in (100) InP samples proves to be favored by the so-called nucleation layer exhibiting branching pores oriented along 111 directions. The combination of long-range order with self-induced diameter oscillations is shown to be promising for nonlithographic growth of three-dimensional pore crystals. | en_US |
dc.language.iso | en | en_US |
dc.publisher | American Institute of Physics | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | crystalline arrays | en_US |
dc.subject | arrays | en_US |
dc.subject | pores | en_US |
dc.subject | pore crystals | en_US |
dc.subject | crystals | en_US |
dc.title | Self-organized growth of single crystals of nanopores | en_US |
dc.type | Article | en_US |
The following license files are associated with this item: