Large area etching for porous semiconductors

CARSTENSEN, J.; CHRISTOPHERSEN, M.; LÖLKES, S.; OSSEI-WUSU, E.; BAHR, J.; LANGA, S.; POPKIROV, G.; FÖLL, H.

dc.contributor.author	CARSTENSEN, J.
dc.contributor.author	CHRISTOPHERSEN, M.
dc.contributor.author	LÖLKES, S.
dc.contributor.author	OSSEI-WUSU, E.
dc.contributor.author	BAHR, J.
dc.contributor.author	LANGA, S.
dc.contributor.author	POPKIROV, G.
dc.contributor.author	FÖLL, H.
dc.date.accessioned	2020-11-25T11:00:23Z
dc.date.available	2020-11-25T11:00:23Z
dc.date.issued	2005
dc.identifier.citation	CARSTENSEN, J., CHRISTOPHERSEN, M., LÖLKES, S.et al. Large area etching for porous semiconductors. In: Physica STatus Solidi (c). 2005, V. 123, Nr. 9, pp. 3339-3343. ISSN 1862-6351 (print), 1610-1642 (web).	en_US
dc.identifier.uri	https://doi.org/10.1002/pssc.200461159
dc.identifier.uri	http://repository.utm.md/handle/5014/11744
dc.description	Access full text - https://doi.org/10.1002/pssc.2004611595	en_US
dc.description.abstract	While electrochemical etching of small samples in the 1 cm region is relatively easy, this is not true for large areas, i.e. standard wafer sizes up to 300 mm. The paper outlines the specific demands and difficulties in some detail, discusses large area etching strategies and systems, in particular for very deep macropores, and presents and discusses various results from the large area etching system of the authors.	en_US
dc.language.iso	en	en_US
dc.publisher	WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	electrochemical etching	en_US
dc.subject	etching	en_US
dc.title	Large area etching for porous semiconductors	en_US
dc.type	Article	en_US