Raman and Hall-effect characterization of Zn/sup +//P/sup +/ co-implanted GaAs subjected to rapid thermal annealing

URSAKI, V. V.; TERLETSKY, A. I.; TIGINYANU, I. M.

dc.contributor.author	URSAKI, V. V.
dc.contributor.author	TERLETSKY, A. I.
dc.contributor.author	TIGINYANU, I. M.
dc.date.accessioned	2020-11-20T10:52:21Z
dc.date.available	2020-11-20T10:52:21Z
dc.date.issued	1998
dc.identifier.citation	URSAKI, V. V., TERLETSKY, A. I., TIGINYANU, I. M. Raman and Hall-effect characterization of Zn/sup +//P/sup +/ co-implanted GaAs subjected to rapid thermal annealing. In: International Semiconductor Conference: pros., 6-10 Oct. 1998, Sinaia, Romania. 1998, V. 1, pp. 97-100. ISBN: 0-7803-4432-4.	en_US
dc.identifier.isbn	0-7803-4432-4
dc.identifier.uri	https://doi.org/10.1109/SMICND.1998.732294
dc.identifier.uri	http://repository.utm.md/handle/5014/11608
dc.description	Acces full text: https://doi.org/10.1109/SMICND.1998.732294	en_US
dc.description.abstract	It is shown that Zn/sup +//P/sup +/ co-implantation in combination with rapid thermal annealing (RTA) allows one to obtain p-type GaAs layers with the peak hole concentration as high as 2.10/sup 19/ cm/sup -3/ and narrow impurity profile within 0.15 /spl mu/m.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	thermal annealing	en_US
dc.subject	ion implantation	en_US
dc.subject	zinc	en_US
dc.subject	phosphorus	en_US
dc.subject	gallium arsenide	en_US
dc.subject	semiconductors	en_US
dc.subject	holes	en_US
dc.subject	Raman spectra	en_US
dc.subject	layers	en_US
dc.subject	impurities	en_US
dc.subject	plasma	en_US
dc.subject	crystals	en_US
dc.subject	transistors	en_US
dc.subject	doping	en_US
dc.title	Raman and Hall-effect characterization of Zn/sup +//P/sup +/ co-implanted GaAs subjected to rapid thermal annealing	en_US
dc.type	Article	en_US