dc.contributor.author | URSAKI, V. V. | |
dc.contributor.author | TIGINYANU, I. M. | |
dc.contributor.author | SYRBU, N. N. | |
dc.contributor.author | ZALAMAI, V. V. | |
dc.contributor.author | HUBBARD, S. | |
dc.contributor.author | PAVLIDIS, D. | |
dc.date.accessioned | 2020-11-17T11:51:37Z | |
dc.date.available | 2020-11-17T11:51:37Z | |
dc.date.issued | 2002 | |
dc.identifier.citation | URSAKI, V. V., TIGINYANU, I. M., SYRBU, N. N. et al. Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures. In: Semiconductor Science and Technology, 2002, V. 18, Nr. 2, pp. L9--L11. ISSN 0268-1242 (print), 1361-6641 (web). | en_US |
dc.identifier.uri | https://doi.org/10.1088/0268-1242/18/2/101 | |
dc.identifier.uri | http://repository.utm.md/handle/5014/11532 | |
dc.description | Access full text - https://doi.org/10.1088/0268-1242/18/2/101 | en_US |
dc.description.abstract | Sharp variations in optical reflectivity were observed when cooling and heating AlN/GaN heterostructures on sapphire substrates between room temperature and 10 K. The reflectivity was found to decrease at a definite temperature Tk in the downward temperature run, and to recover at Tr > Tk in the subsequent upward temperature run. The temperature behaviour of reflectivity exhibits memory on the cooling–heating cycles previously subjected to samples. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IOP Publishing | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | reflectivity | en_US |
dc.subject | heterostructures | en_US |
dc.title | Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures | en_US |
dc.type | Article | en_US |
The following license files are associated with this item: