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Random lasing in nanostructured ZnO produced from bulk ZnSe

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dc.contributor.author URSAKI, V. V.
dc.contributor.author ZALAMAI, V. V.
dc.contributor.author BURLACU, A.
dc.contributor.author KLINGSHIRN, C.
dc.contributor.author MONAICO, E.
dc.contributor.author TIGINYANU, I. M.
dc.date.accessioned 2020-11-12T12:54:25Z
dc.date.available 2020-11-12T12:54:25Z
dc.date.issued 2009
dc.identifier.citation URSAKI, V. V., ZALAMAI, V. V., BURLACU, A. et al. Random lasing in nanostructured ZnO produced from bulk ZnSe. In: Semiconductor Science and Technology, 2009, V. 24, Nr. 8, pp. 085017. ISSN 0268-1242 (print), 1361-6641 (web). en_US
dc.identifier.uri https://doi.org/10.1088/0268-1242/24/8/085017
dc.identifier.uri http://repository.utm.md/handle/5014/11393
dc.description Access full text - https://doi.org/10.1088/0268-1242/24/8/085017 en_US
dc.description.abstract We propose to produce three-dimensional ZnO random laser media on the basis of bulk ZnSe. Bulk ZnSe wafers are transformed into granular ZnO media by thermal treatment in oxygen ambient at temperatures in the range of 700–800 °C. This technology ensures a high optical quality of the ZnO nanostructured material produced to act as a gain medium for stimulated emission in the ultraviolet spectral region in combination with high-quality factor random laser resonators indicated by narrow lasing peaks. The quality factor for the observed emission modes is estimated to be around 1500. The structures produced are expected to find applications in microlaser technologies for optoelectronics and photonics. en_US
dc.language.iso en en_US
dc.publisher IOP Publishing en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject laser media en_US
dc.subject nanostructured materials en_US
dc.subject microlaser technologies en_US
dc.subject optoelectronics en_US
dc.subject photonics en_US
dc.title Random lasing in nanostructured ZnO produced from bulk ZnSe en_US
dc.type Article en_US


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