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Raman-active modes of porous gallium phosphide at high pressures and low temperatures

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dc.contributor.author URSAKI, V. V.
dc.contributor.author MANJÓN, F. J.
dc.contributor.author SYASSEN, K.
dc.contributor.author TIGINYANU, I. M.
dc.contributor.author IRMER, G.
dc.contributor.author MONECKE, J.
dc.date.accessioned 2020-11-12T10:13:07Z
dc.date.available 2020-11-12T10:13:07Z
dc.date.issued 2002
dc.identifier.citation URSAKI, V. V., MANJON, F. J., SYASSEN, K. et al. Raman-active modes of porous gallium phosphide at high pressures and low temperatures. In: Journal of Physics: Condensed Matter, 2002, V. 14, Nr. 50, pp. 13879-13887. ISSN 0953-8984 (print); 1361-648X (web). en_US
dc.identifier.uri https://doi.org/10.1088/0953-8984/14/50/313
dc.identifier.uri http://repository.utm.md/handle/5014/11361
dc.description Access full text - https://doi.org/10.1088/0953-8984/14/50/313 en_US
dc.description.abstract Porous gallium phosphide (GaP) with a honeycomb-like morphology and a skeleton relative volume concentration c = 0.7 was investigated by Raman spectroscopy under pressure up to 10 GPa at T = 5 K. The porous samples were prepared by electrochemical etching. The transverse optical (TO) and longitudinal optical (LO) mode frequencies were found to shift with pressure similarly to those of bulk GaP. As in bulk GaP, the TO feature of the porous GaP exhibits a pressure-induced narrowing which is interpreted in terms of a Fermi resonance. The scattering intensity observed on the low-frequency side of the LO mode is attributed to surface-related Fröhlich mode scattering. The latter results are interpreted on the basis of an effective medium expression for the dielectric function. The Raman spectra indicate that both the morphology and degree of porosity are unaffected by pressure in the range investigated. en_US
dc.language.iso en en_US
dc.publisher IOP Publishing en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject porous gallium phosphide en_US
dc.subject gallium phosphide en_US
dc.subject Raman spectroscopy en_US
dc.subject electrochemical etching en_US
dc.subject dielectric functions en_US
dc.title Raman-active modes of porous gallium phosphide at high pressures and low temperatures en_US
dc.type Article en_US


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