Variable-range hopping conductivity in Cu2ZnGeSe4 single crystals

GUC, M.; LISUNOV, K. G.; HAJDEU, E.; LEVCENKO, S.; URSAKI, V.; ARUSHANOV, E.

dc.contributor.author	GUC, M.
dc.contributor.author	LISUNOV, K. G.
dc.contributor.author	HAJDEU, E.
dc.contributor.author	LEVCENKO, S.
dc.contributor.author	URSAKI, V.
dc.contributor.author	ARUSHANOV, E.
dc.date.accessioned	2020-11-11T15:28:41Z
dc.date.available	2020-11-11T15:28:41Z
dc.date.issued	2014
dc.identifier.citation	GUC, M., LISUNOV, K. G., HAJDEU, E. et al. Variable-range hopping conductivity in Cu2ZnGeSe4 single crystals. In: Solar Energy Materials and Solar Cells, 2014, V. 127, pp. 87-91. ISSN 0927-0248.	en_US
dc.identifier.uri	https://doi.org/10.1016/j.solmat.2014.04.004
dc.identifier.uri	http://repository.utm.md/handle/5014/11355
dc.description	Access full text - https://doi.org/10.1016/j.solmat.2014.04.004	en_US
dc.description.abstract	Resistivity, ρ(T), of the Cu2ZnGeSe4 single crystals is investigated between T~10 and 300K. The Mott variable-range hopping (VRH) conductivity is observed in the temperature interval of ~80–230K. Analysis of the Mott VRH conductivity yields the values of the semi-width of the acceptor band, W≈13–15meV, the relative acceptor concentration, NA/Nc≈0.86–0.89, at the critical concentration of the metal–insulator transition, Nc≈6.3×1018cm−3, the values of the localization radius, a/aB≈7–9 with the Bohr radius aB≈13.5Å, the mean acceptor energy E0≈82meV and the mean density of the localized states, g≈(1.7–2.1)×1017meV−1cm−3.	en_US
dc.language.iso	en	en_US
dc.publisher	ELSEVIER	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	single crystals	en_US
dc.subject	crystals	en_US
dc.title	Variable-range hopping conductivity in Cu2ZnGeSe4 single crystals	en_US
dc.type	Article	en_US