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Photoluminescence of ZnO layers grown on opals by chemical deposition from zinc nitrate solution

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dc.contributor.author URSAKI, V. V.
dc.contributor.author TIGINYANU, I. M.
dc.contributor.author ZALAMAI, V. V.
dc.contributor.author MASALOV, V. M.
dc.contributor.author SAMAROV, E. N.
dc.contributor.author EMELCHENKO, G. A.
dc.contributor.author BRIONES, F.
dc.date.accessioned 2020-11-11T11:10:24Z
dc.date.available 2020-11-11T11:10:24Z
dc.date.issued 2004
dc.identifier.citation URSAKI, V. V., TIGINYANU, I. M., ZALAMAI, V. V. et al. Photoluminescence of ZnO layers grown on opals by chemical deposition from zinc nitrate solution. In: Semiconductor Science and Technology, 2004, V. 19, Nr. 7, pp. 851-854. ISSN 0268-1242 (print), 1361-6641 (web). en_US
dc.identifier.uri https://doi.org/10.1088/0268-1242/19/7/012
dc.identifier.uri http://repository.utm.md/handle/5014/11315
dc.description Access full text - https://doi.org/10.1088/0268-1242/19/7/012 en_US
dc.description.abstract The emission from ZnO layers grown on the surface of bulk opals using chemical deposition is studied under excitation by the 351.1 nm line of an Ar+ laser at different excitation power densities and temperatures. The emission spectrum exhibits narrow photoluminescence (PL) bands associated with the recombination of bound and free excitons as well a relatively broad band around 3.31 eV. The width of the excitonic lines (2–3 meV) along with their energy position are indicative of the high quality and strain-free state of the layer. The origin of the 3.31 eV PL band is discussed in connection with its dependence upon the excitation power density and temperature. en_US
dc.language.iso en en_US
dc.publisher IOP Publishing en_US
dc.rights Attribution-NonCommercial-NoDerivs 3.0 United States *
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/us/ *
dc.subject zinc oxide layers en_US
dc.subject layers en_US
dc.title Photoluminescence of ZnO layers grown on opals by chemical deposition from zinc nitrate solution en_US
dc.type Article en_US


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