Fabrication and photoluminescence properties of porous CdSe

TIGINYANU, I. M.; MONAICO, E.; URSAKI, V. V.; TEZLEVAN, V. E.; BOYD, Robert W.

dc.contributor.author	TIGINYANU, I. M.
dc.contributor.author	MONAICO, E.
dc.contributor.author	URSAKI, V. V.
dc.contributor.author	TEZLEVAN, V. E.
dc.contributor.author	BOYD, Robert W.
dc.date.accessioned	2020-11-11T10:55:11Z
dc.date.available	2020-11-11T10:55:11Z
dc.date.issued	2005
dc.identifier.citation	TIGINYANU, I. M., MONAICO, E., URSAKI, V. V. et al. Fabrication and photoluminescence properties of porous CdSe. In: Applied Physics Letters, 2005, V. 86, Nr. 6, pp. 063115. ISSN 0003-6951.	en_US
dc.identifier.uri	https://doi.org/10.1063/1.1864240
dc.identifier.uri	http://repository.utm.md/handle/5014/11314
dc.description	Access full text - https://doi.org/10.1063/1.1864240	en_US
dc.description.abstract	We report the results of a study of the growth of pores in n-CdSen-CdSe single crystals using anodic etching techniques. Upon anodization in dark, a nonuniform distribution of pores was produced. However, anodic dissolution of the material under in situ UV illumination proves to result in uniform distribution of pores stretching perpendicularly to the initial surface of the specimen. The porous structures exhibit less luminescence than the bulk samples. These results pave the way for cost-effective manufacturing of CdSe-based semiconductor nanotemplates for nanofabrication.	en_US
dc.language.iso	en	en_US
dc.publisher	Springer Nature Switzerland	en_US
dc.rights	Attribution-NonCommercial-NoDerivs 3.0 United States	*
dc.rights.uri	http://creativecommons.org/licenses/by-nc-nd/3.0/us/	*
dc.subject	single crystals	en_US
dc.subject	crystals	en_US
dc.subject	anodic etching	en_US
dc.subject	pores	en_US
dc.title	Fabrication and photoluminescence properties of porous CdSe	en_US
dc.type	Article	en_US